COMPARATIVE STUDY OF ALUMINIUM DOPED ZINC OXIDE FOR ORGANIC LIGHT EMITTING DIODES (OLE
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Date
0022-06-22
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KINNAIRD COLLEGE PHYSICS DEPARTMENT
Abstract
Technology has a significant impact on the electronics industry, causing it to become
more creative and innovative in its production. Organic light-emitting diodes, or
OLEDs, have transformed modern technology. We have studied that Aluminum
doped zinc oxide tin coatings or thin films were produced by sputtering at various
radio frequency power densities under argon gas pressure of 0.15 Pascal (Pa) to
improve parameters at all for utilization for both in bottom emitting and transparent
organic light emitting diodes. Therefore, the films have a wurtzite type hexagonal
arrangement with 0002 preferential orientations and an optical transparency of more
than 80 percent in the visible range, however the energy bandgap varies. Sputtering
at a high radio frequency power density of 2.47 Wcm-2 produces Aluminium doped
zinc oxide films with low resistivity and high work function, which are suitable for
anodes in bottom emitting organic light emitting diodes. Al- doped ZnO films
developed at a low radio frequency power density of 0.31 Wcm-2
, on the other hand,
relate to a low work function with somewhat greater electrical resistivity and are
therefore suitable for cathode in transparent organic LEDs. Hence, the equivalent
performance of organic light emitting diodes made with Al-doped Zinc oxide and
Indium tin oxide anodes confirms Aluminium doped zinc oxide applicability as an
alternative electrode. We have studied that sol-gel method was used to create graded
patterns of aluminum-doped zinc oxide or the AZO multilayered thin coating or
thinner films on quartz glass substrate. To minimize stress, different Aluminium mol
percent doped Zinc oxide graded topologies of multilayered thin films were
developed. The tension between the layers was minimized by using graded
multilayered thin films. X-ray diffraction abbreviated as XRD and an Ultraviolet
visible spectrophotometer have been used to explore and analyze the graded
constructions of multilayered Aluminium doped zinc oxide thin coatings or thin
films. As a result, multilayered graded thin films of the thin coatings may be
generated with less stress then crystallized or stabilized all along the c-axis. Thus,
the optical transmittance of the films is about 94.8 percent at 400 nanometers to 800
vi
nanometers wavelength and the energy band-gap is approximately 3.27 electron volts. The sol-gel method has important implications for creating trustworthy
aluminium doped zinc oxide multilayer nanostructures or the thin film coatings with
minimal strain-stress for device applications such as OLEDs. The sol-gel method
was considered to be the most promising and appropriate method for the synthesis
of Al-doped ZnO for device applications such as OLEDs