SIMULATION OF STRUCTURES AND POWDER DIFFRACTION PATTERNS OF α-𝐆𝐚𝟐𝐎𝟑AND β-𝐆𝐚𝟐𝐎𝟑
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Date
2023-05-17
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DEPARTMENT OF PHYSICS KINNAIRD COLLEGE FOR WOMEN UNIVERSITY LAHORE,
Abstract
Silicon is approaching the peak of its performance, and basic limitations on its materials
properties. A new oxide semiconducting material gallium oxide is a perfect material for the
power devices in very high voltage applications. Ga2O3 has several crystalline forms, such
as α, β, γ and δ phases, with different properties and applications. For example, the β Ga2O3, phase has a wider band gap compared to α phase and is suitable for UV
optoelectronic devices. Fabrication and characterization of Ga2O3 based devices have been
ongoing for several years, with recent breakthroughs in the growth of high-quality single crystal substrates and development of high-performance devices. Superior material
properties of Gallium Oxide, especially a significantly larger band gap than those of Silicon
Carbide and Gallium Nitride, aptitude power devices with higher Vbr and efficiency than
Silicon Carbide and Gallium Nitride counterparts. Another significant feature of Ga2O3 is
that instinctive substrates can be created from bulk single crystals grown using the same
melt-growth procedures as sapphire substrates. In this research work, two of five
polymorphs of Gallium Oxide are theoretically analyzed. From literature review, it was
observed that the β phase exists as most stable polymorph. VESTA Software was used to
achieve better understanding of different parameters in terms of crystal structures, XRD
patterns, fractional coordinates and lattice planes for Ga2O3 α and β polymorphs.
Challenges remain in the processing and scaling up of Ga2O3-based devices, as well as
improving their efficiency and reliability. Overall, Ga2O3, is a favorable material for
advanced power electronics, optoelectronics and sensing applications, and ongoing
research is expected to lead to new breakthroughs and commercialization of Ga2O3-based
devices soon