SIMULATION OF STRUCTURES AND POWDER DIFFRACTION PATTERNS OF α-𝐆𝐚𝟐𝐎𝟑AND β-𝐆𝐚𝟐𝐎𝟑

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dc.contributor.authorFIZZA AFTAB
dc.date.accessioned2025-04-30T07:41:39Z
dc.date.available2025-04-30T07:41:39Z
dc.date.issued2023-05-17
dc.description.abstractSilicon is approaching the peak of its performance, and basic limitations on its materials properties. A new oxide semiconducting material gallium oxide is a perfect material for the power devices in very high voltage applications. Ga2O3 has several crystalline forms, such as α, β, γ and δ phases, with different properties and applications. For example, the β Ga2O3, phase has a wider band gap compared to α phase and is suitable for UV optoelectronic devices. Fabrication and characterization of Ga2O3 based devices have been ongoing for several years, with recent breakthroughs in the growth of high-quality single crystal substrates and development of high-performance devices. Superior material properties of Gallium Oxide, especially a significantly larger band gap than those of Silicon Carbide and Gallium Nitride, aptitude power devices with higher Vbr and efficiency than Silicon Carbide and Gallium Nitride counterparts. Another significant feature of Ga2O3 is that instinctive substrates can be created from bulk single crystals grown using the same melt-growth procedures as sapphire substrates. In this research work, two of five polymorphs of Gallium Oxide are theoretically analyzed. From literature review, it was observed that the β phase exists as most stable polymorph. VESTA Software was used to achieve better understanding of different parameters in terms of crystal structures, XRD patterns, fractional coordinates and lattice planes for Ga2O3 α and β polymorphs. Challenges remain in the processing and scaling up of Ga2O3-based devices, as well as improving their efficiency and reliability. Overall, Ga2O3, is a favorable material for advanced power electronics, optoelectronics and sensing applications, and ongoing research is expected to lead to new breakthroughs and commercialization of Ga2O3-based devices soon
dc.identifier.urihttps://repository.kinnaird.edu.pk/handle/123456789/209
dc.language.isoen_US
dc.publisherDEPARTMENT OF PHYSICS KINNAIRD COLLEGE FOR WOMEN UNIVERSITY LAHORE,
dc.titleSIMULATION OF STRUCTURES AND POWDER DIFFRACTION PATTERNS OF α-𝐆𝐚𝟐𝐎𝟑AND β-𝐆𝐚𝟐𝐎𝟑
dc.typeThesis

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